Anson Mei has launched the latest generation of the T10 PowerTrench® series and EliteSiC 650V MOSFET combination solution, which helps data centers reduce power loss by about 1%. It is reported that the T10 PowerTrench series is designed for high current levels that are critical to DC-DC power conversion, providing higher power density and excellent thermal performance through compact packaging dimensions; the new generation of silicon carbide (SiC) MOSFETs reduce gate charge in half, and reduce the energy stored in output capacitors and output charges by 44%. This combination solution complies with the strict Open Rack V3 (ORV3) specifications required by hyperscale operators and supports next-generation high-power processors.
This page may contain third-party content, which is provided for information purposes only (not representations/warranties) and should not be considered as an endorsement of its views by Gate, nor as financial or professional advice. See Disclaimer for details.
Anson Mei has launched the latest generation of the T10 PowerTrench® series and EliteSiC 650V MOSFET combination solution, which helps data centers reduce power loss by about 1%. It is reported that the T10 PowerTrench series is designed for high current levels that are critical to DC-DC power conversion, providing higher power density and excellent thermal performance through compact packaging dimensions; the new generation of silicon carbide (SiC) MOSFETs reduce gate charge in half, and reduce the energy stored in output capacitors and output charges by 44%. This combination solution complies with the strict Open Rack V3 (ORV3) specifications required by hyperscale operators and supports next-generation high-power processors.